Reduced Recombination Current Due to Sputtered CdO Nanolayer at CdS/CdTe Interface

In this paper, interface engineering via sputtering of CdO nanolayer at the buffer-CdS/CdTe-absorber is demonstrated as an efficient approach to improve performance solar cell device. The i-CdO interfacial layer with various thicknesses from 5 nm 35 was deposited by DC magnetron sputtering. Comparative studies on TCO/CdS/CdTe and TCO/CdS/CdO/CdTe interfaces have been conducted current-voltage, capacitance-voltage admittance spectroscopy measurements. current-voltage characteristics devices area 0.45 cm2 under 100 mW/cm2 illumination, optimum thickness intermediate in proposed structures, show increases short circuit current density open voltage 5% 25%, respectively. efficiency improvement 3.1% p-i-n over p-n observed. Results temperature-dependent measurements revealed removing deep level defect activation energy 0.43 eV reducing ideality factor 1.9 1.8 buffer/absorber passivation method. Interface appears be critical voltage, thin film clearly effective for purpose.